High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
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چکیده
منابع مشابه
Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which...
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2016
ISSN: 2050-7526,2050-7534
DOI: 10.1039/c6tc00580b